S. Arslan, P.S. Basler, B. King, J. Glaab, A. Maaßdorf, D. Martin, A. Knigge, A. Ginolas, S. Kreutzmann and P. Crump

Published in:

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2023), Munich, Germany, Jun. 26-30, ISBN: 979-8-3503-4599-5, cb-11-3 (2023).

Abstract:

High-power GaAs-based diode lasers are critical components for material processing applications, and have high potential for use in additive manufacturing systems (AM) [1]. High power continuous-wave (CW) diode lasers with operating wavelength λ ∼ 780 nm can enable higher build rates for AM of Ni-, Fe-, and especially Al-alloys due to the higher absorption compared to conventional λ = 1070 nm [2]. High output power Pout per device and high conversion efficiency ηE are required for reduced costs for industry in €/W however increasing Pout and ηE is challenging for 780 nm due to the available semiconductor materials.

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