K. Tetzner¹, E. Bahat Treidel¹, O. Hilt¹, A. Popp², S. Bin Anooz², G. Wagner², A. Thies¹, K. Ickert¹, H. Gargouri³, and J. Würfl¹

Published in:

IEEE Electron Device Lett., vol. 40, no. 9, pp. 1503-1506 (2019).

Abstract:

Lateral β-Ga₂O₃ MOSFET for power switching applications with a 1.8 kV breakdown voltage and a record power figure of merit of 155 MW/cm² are demonstrated. Sub-µm gate length combined with gate recess was used to achieve low ON-state resistances with reasonable threshold voltages above -24 V. The combination of compensation-doped high-quality crystals, implantation-based inter-device isolation, and SiN_x-passivation yielded in consistently high average breakdown field strengths of 1.8-2.2 MV/cm for gate-drain spacings between 2 and 10 µm. These values outperform the results of more established wide-bandgap device technologies, such as SiC or GaN, and the major Ga₂O₃ material promise — a higher breakdown strength — is well demonstrated.

Index Terms:

Ga₂O₃, MOSFET, power electronics, break-down, high voltage.

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