Noise in GaN HEMTs and Circuits
M. Rudolph1,2, C. Andrei1, R. Doerner2, S.A. Chevtchenko2, W. Heinrich2
Published in:
International Conference on Noise and Fluctuations (ICNF 2017), Vilnius, Lithuania, Jun. 20-23 (2017).
Abstract:
GaN HEMTs are known to outperform GaAs technologies in power applications, while their noise performance drew much less attention. Only recently, results were published for GaN that are competitive in terms of low-noise performance. This paper discusses the optimization of GaN HEMT technology concerning low-noise performance empirically, based on own measurements and on data from the literature. Finally, the current status in low-noise amplifier performance and ruggedness is briefly discussed.
1 Ulrich L. Rohde Chair of RF and Microwave Techniques, Brandenburg University of Technology, Cottbus, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Index Terms:
Amplifier noise, Integrated circuit noise, Microwave FET amplifiers, MMIC amplifiers, Noise, Semiconductor device noise
Copyright © 2017 IEEE - All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Full version in pdf-format.