Watt-level continuous-wave diode lasers at 1180 nm with high spectral brightness
K. Paschke, G. Blume, O. Brox, F. Bugge, J. Fricke, D. Feise, J. Hofmann, H. Wenzel, and G. Erbert
Published in:
Proc. SPIE 9348, Photonics West, San Francisco, USA, Feb. 07-12, 93480X (2015).
Abstract:
Distributed Bragg reflector (DBR) tapered lasers emitting near 1180 nm were developed. The integration of DBR surface gratings in an edge-emitting laser structure with a highly strained quantum well and a tapered laser geometry allows nearly diffraction limited emission into a single longitudinal mode with an optical output power of more than 2 W. The laser will al-low direct second harmonic generation (SHG) in a single pass configuration and hence will enable the manufacturing of minia-turized laser modules near 590 nm for out-of-the-lab applications. An integration of a heater element at the DBR grating al-lows the tuning of the emission wavelength of more than 2 nm without the mechanical movement of gratings. This easy tuning simplifies the phase matching to a SHG crystal.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Keywords:
1180 nm, diode laser, high-brightness, high brilliant, Distributed Bragg Reflector, second harmonic generation.
Copyright © 2015 COPYRIGHT SPIE--The International Society for Optical Engineering. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from SPIE.
Full version in pdf-format.