AlGaN on AlN/Sapphire: A New Material Platform in Integrated Photonics Technology
S. Gündogdu1,2, T. Pregnolato1,2, S. Pazzagli1, T. Kolbe2, S. Hagedorn2, M. Weyers2 and T. Schröder1,2
Published in:
Conf. on Lasers and Electro-Optics (CLEO 2024), Charlotte, USA, May 5-10, ISBN 978-1-957171-39-5, p. AW3J.4, doi:10.1364/CLEO_AT.2024.AW3J.4 (2024).
Abstract:
AlGaN on AlN/Sapphire stands out in photonics for its strong nonlinearity, electro-optic modulability, and low loss in the visible spectrum. We fabricate and characterize AlGaN photonic devices, including ring resonators, directional couplers, and tapers.
1 Department of Physics, Humboldt-Universität zu Berlin, Newtonstr. 15, 12489 Berlin, Germany
2 Ferdinand-Braun-Institut, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
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