F. Mauerhoff, O. Senel, H. Wenzel, A. Maaßdorf, J. Boschker, J. Glaab, K. Paschke, G. Tränkle

Published in:

IET Optoelectron., vol. 18, no. 5, pp. 140-145, doi:10.1049/ote2.12125 (2024).

Abstract:

The authors present continuous wave (CW) high‐power broad area and ridge waveguide lasers with laser emission at 626 nm at room temperature. For this, the authors employ GaAs‐based diode lasers in the AlGaInP system for laser emission at 626 nm at room temperature. The laser structure is grown on three‐inch wafers by metal organic vapour phase epitaxy. Broad area and ridge waveguide lasers are fabricated. Pulsed broad area laser characterisation on bar level shows laser operation at 20 °C heat sink temperature. The authors measured peak lasing wavelengths as short as 625 nm and total maximum output power of both facets up to 1.4 W at an injection current of 2 A. Both, broad area and ridge waveguide lasers show laser operation and CW excitation at room temperature. The ridge waveguide lasers emit output powers of over 90 mW at 626 nm at a maximum injection current of 200 mA with a nearly diffraction‐limited beam profile.

Keywords:

III‐V semiconductors, fabry‐perot resonators, MOCVD, semiconductor epitaxial layers, semiconductor lasers, semiconductor quantum wells, quantum well lasers.

© 2024 The Author(s). IET Optoelectronics published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology.
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