Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1
K. Tetzner1, M. Klupsch1, A. Popp2, S.B. Anooz2, T.-S. Chou2, Z. Galazka2, K. Ickert1, M. Matalla1, R.-S. Unger1, E. Bahat Treidel1, M. Wolf1, A. Trampert3, J. Würfl1, and O. Hilt1
Published in:
Jpn. J. Appl. Phys., vol. 62, no. SF, pp. SF1010, doi:10.35848/1347-4065/acbebc (2023).
Abstract:
In this work, we report on the realization of vertical (100) β-Ga2O3 FinFET devices for the use in power electronics applications. The experiments are carried out on structures consisting of highly conducting (100) β-Ga2O3 substrates with a doping concentration ND of 3 × 1018 cm−3, and epitaxially grown layers with ND of × 1016 cm−3 for the drift and channel region. The fabricated FinFET devices feature enhancement-mode properties with a threshold voltage of +4.2 V and on/off-current ratio of 105. Moreover, breakdown measurements of these devices reveal an average breakdown strength of 2.7 MV cm−1. Additional device simulation indicates the presence of electric field peaks near the gate edge outside the active device as high as 7 and 5 MV cm−1 in the Al2O3 gate oxide and β-Ga2O3 semiconductor, respectively.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Leibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, D-12489 Berlin, Germany
3 Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany
© 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd
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