Modeling of the gate leakage in MOSFETs with Al2O3/β-Ga2O3 gate stack
C. De Santia, M. Fregolenta, E. Brusaterraa,b, K. Tetznerb, J. Würflb, M. Buffoloa, G. Meneghessoa, E. Zanonia, M. Meneghinia,c
Published in:
Proc. of SPIE, vol. 12887, Oxide-based Materials and Devices XV, Photonics West, San Francisco, USA, Jan 27 - Feb 1, 128870B (2024).
a Department of Information Engineering, University of Padova, Padova, Italy
b Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
c Department of Physics and Astronomy, University of Padova, Padova, Italy
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