1. Forschung
  2. Publikationen
  3. The role of gate leakage on su ...

Publikationen

Wissenschaftliche Beiträge

 zu Konferenzen finden Sie übrigens auch bei den Terminen.

The role of gate leakage on surface-related current collapse in AlGaN/GaN HEMTs

C. Zervos1, P. Beleniotis1, S. Krause1,3, D. Ritter2, M. Rudolph1,4

Published in:

Proc. 18th European Microwave Integrated Circuits Conference (EuMIC 2023), Berlin, Germany, Sep. 18-19, ISBN: 978-2-87487-073-6, pp. 297-300 (2023).

Abstract:

The parasitic gate tunnelling of electrons into surface traps is shown to be responsible for the current collapse in GaN high electron mobility transistors. Simulations with and without surface traps are compared to pulsed output and gate leakage measurements and showed that the detrimental effect of surface traps is evident at positive gate voltages. Moreover, an apparent relationship between 2-dimensional electron density and Schottky reverse gate current is revealed in the presence of surface traps.

1 Brandenburg University of Technology Cottbus-Senftenberg (BTU), Germany
2 Technion-Israel Institute of Technology, Israel
3 Now with Kongsberg Defence and Aerospace, Space Electronics, Norway
4 Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik (FBH), Germany

Keywords:

Gallium Nitride (GaN), technology computer-aided design (TCAD), surface trapping, current collapse.

Copyright © 2023 EuMA. All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the EuMA.

Full version in pdf-format.