All-GO-HEMT project gains €2m German funding to develop high-mobility gallium oxide

Led by Dr Andreas Fiedler at Germany’s Leibniz-Institut für Kristallzüchtung im Forschungsverbund Berlin e.V. (IKZ), the ‘All-GO-HEMT’ project aims to develop modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures that exhibit high electron mobility. With total project funding of almost €2m, financed by the German Federal Ministry of Education and Research (BMBF), this project is expected to lead to a considerable increase in efficiency in power electronics and thus make a significant contribution to sustainable energy generation.
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