German researchers demo practical implementation of AlN-based value chain for power semiconductors

In power electronics, conventional silicon devices are being replaced by more powerful wide-bandgap (WBG) semiconductors with superior physical and electrical properties. Silicon carbide (SiC) has already established itself on an industrial scale, but devices based on gallium nitride (GaN) are also on the rise. However, it is already foreseeable that, in the future, even WBG device properties will be surpassed by ultrawide-bandgap (UWBG) semiconductors like aluminium nitride (AlN).
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