Soitec kicks off European project Move2THz to develop future high-frequency InP-based semiconductors

A European research and industry consortium led by engineered substrate manufacturer Soitec of Bernin, near Grenoble, France has begun work to develop a future generation of high-frequency semiconductors based on indium phosphide (InP).

These technologies are set to address applications ranging from photonics for mega data centers and AI to radio frequency front-ends and integrated antennas critical for 6G mobile communication, sub-THz radar sensing and beyond.
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